On application of partial differential equations to model of technological process during increasing of integration rate of complementary gate overlap field-effect heterotransistors in the framework of a double tail comparator

Abstract

In this paper we introduce an approach to increase integration rate of complementary gate overlap field-effect heterotransistors in the framework of a double tail comparator. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized. We present a model based on partial differential equations for prognosis of technological process. We also presented an analytical approach to analyze to analyze the model. The approach gives a possibility to take into account spatial and temporal variations of parameters of the considered model as well as nonlinearity of the considered processes.