On Application of Partial Differential Equations to Model of Technological Process During in-Creasing of Integration Rate of Complementary Gate Overlap Field-Effect Heterotransistors in the Framework of a Double Tail Comparator

Authors

  • Evgeny L. Pankratov * Nizhny Novgorod Article Agrotechnical University, 97 Gagarin Avenue, Nizhny Novgorod, 603950, Russia.

https://doi.org/10.48314/imes.vi.36

Abstract

In this paper, we propose an approach for increasing the integration density of complementary gate overlap field-effect heterotransistors within the framework of a double-tail comparator. The pro-posed approach is based on the use of a heterostructure with a specially designed configuration. Several designated regions of the heterostructure are selectively doped using diffusion and/or ion implantation techniques. The subsequent annealing process, aimed at activating dopants and repair-ing radiation-induced defects, is subject to optimization.To predict and analyze the technological process, we develop a comprehensive mathematical model based on a system of partial differential equations. Furthermore, an analytical approach is employed to investigate the proposed model. This approach enables the consideration of both spatial and tem-poral variations of the model parameters, as well as the inherent nonlinearities of the underlying physical processes.    

Keywords:

Complementary gate overlaps field-effect heterotransistors, Double tail comparator, Opti-mization of manufacturing, Analytical approach for prognosis

References

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Published

2025-11-15

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Vol. 3 No. 1 (2026): Intelligence Modeling in Electromechanical Systems (IMES)

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How to Cite

Pankratov, E. L. (2025). On Application of Partial Differential Equations to Model of Technological Process During in-Creasing of Integration Rate of Complementary Gate Overlap Field-Effect Heterotransistors in the Framework of a Double Tail Comparator. Intelligence Modeling in Electromechanical Systems, 3(1), 57-66. https://doi.org/10.48314/imes.vi.36

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